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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *High Switching Speed APPLICATIONS *Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 600 400 5 7 10 2 75 150 -65~150 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.66 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU810 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA B 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 2.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 3 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 20mA B 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 3 V ICES Collector Cutoff Current VCE= 600V; VBE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 150 mA VECF C-E Diode Forward Voltage IF= 7A 3 V Switching Times, Resistive Load ton Turn-On Time IC= 2A; IB1= 20mA;VBE(off)= -5V VClamp= 250V 0.6 s ts Storage Time 1.5 s tf Fall Time 0.5 s isc Websitewww.iscsemi.cn 2 |
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